CHARACTERIZATION OF THIN SILICON-OXIDE OBTAINED BY LAMP HEATING

被引：6
|
作者：
SLAOUI, A
PONPON, JP
SIFFERT, P
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 43卷 / 04期
关键词：
D O I：
10.1007/BF00635188
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：301 / 304
页数：4
相关论文
共 50 条
  • [31] Spectroscopic ellipsometry on silicon-oxide films on silicon
    Jungk, G
    Grabolla, T
    THIN SOLID FILMS, 1998, 335 (1-2) : 253 - 257
  • [32] ARSENIC SEGREGATION TO SILICON SILICON-OXIDE INTERFACES
    WONG, CY
    GROVENOR, CRM
    BATSON, PE
    ISAAC, RD
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1259 - 1262
  • [33] WORK FUNCTION TOPOGRAPHY OF SILICON AND SILICON-OXIDE
    CHARTIER, JL
    PILORGET, L
    LEBIHAN, R
    REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (11): : 927 - 931
  • [34] SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE
    SUGAWARA, Y
    MORITA, S
    FUKANO, Y
    UCHIHASHI, T
    OKUSAKO, T
    CHAYAHARA, A
    YAMANISHI, Y
    OASA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (1A): : L74 - L77
  • [35] INFRARED CHARACTERIZATION OF UV LASER-INDUCED SILICON-OXIDE FILMS
    SLAOUI, A
    FOGARASSY, E
    WHITE, CW
    SIFFERT, P
    APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1832 - 1834
  • [36] OPTICAL CHARACTERIZATION OF SIO1.1 SILICON-OXIDE LAYERS ON INSB
    REMOND, G
    CAYE, R
    HOLLOWAY, PH
    RUZAKOWSKI, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1115 - 1119
  • [37] Photochemistry of thin molecular films on silicon: Silicon-oxide deposition from polymerization of silsesquioxane.
    Sharma, J
    Berry, DH
    Composto, RJ
    Dai, HL
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U515 - U515
  • [38] GROWTH OF BISMUTH SILICON-OXIDE AND BISMUTH GERMANIUM OXIDE CRYSTALS BY THE CZOCHRALSKI TECHNIQUE AND THEIR CHARACTERIZATION
    GOPALAKRISHNAN, R
    KRISHNAMURTHY, D
    ARIVUOLI, D
    RAMASAMY, P
    OPTICAL ENGINEERING, 1993, 32 (04) : 682 - 686
  • [39] MECHANISM OF CARRIER TRANSPORT THROUGH A SILICON-OXIDE LAYER FOR [INDIUM-TIN-OXIDE/SILICON-OXIDE/SILICON] SOLAR-CELLS
    KOBAYASHI, H
    ISHIDA, T
    NAKATO, Y
    MORI, H
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3931 - 3939
  • [40] HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE
    UCHIHASHI, T
    OKUSAKO, T
    SUGAWARA, Y
    YAMANISHI, Y
    OASA, T
    MORITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1128 - L1130
12345