ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS

[11] KATO I, 1981, 13TH P C SOL STAT DE

[12] KATO I, 1982, UNPUB JAPAN J APPL P

[13] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120

[14] LAI SK, 1981, SPR P EL SOC M

[15] MANO T, 1980, ISSCC, P234

[16] MATUE S, 1980, INT SOLID STATE CIRC, P232

[17] MEINDL JD, 1981, IEEE ISSCC DIG TECH, P36

[18] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435

[19] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[20] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003

[11] KATO I, 1981, 13TH P C SOL STAT DE

[12] KATO I, 1982, UNPUB JAPAN J APPL P

[13] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120

[14] LAI SK, 1981, SPR P EL SOC M

[15] MANO T, 1980, ISSCC, P234

[16] MATUE S, 1980, INT SOLID STATE CIRC, P232

[17] MEINDL JD, 1981, IEEE ISSCC DIG TECH, P36

[18] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435

[19] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[20] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003