ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS

被引：212
作者：
ITO, T
NAKAMURA, T
ISHIKAWA, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期
关键词：
D O I：
10.1109/T-ED.1982.20732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：498 / 502
页数：5
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