ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS

被引：212

作者：

ITO, T

NAKAMURA, T

ISHIKAWA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：498 / 502

页数：5

相关论文

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