FORBIDDEN RAMAN-SCATTERING FROM ACOUSTIC PLASMA-WAVES IN P-TYPE A(3)B(5) SEMICONDUCTORS

被引：5

作者：

VOITENKO, VA ^{[1
]}

BAIRAMOV, BH ^{[1
]}

TOPOROV, VV ^{[1
]}

NEGODUIKO, VK ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1995年 / 99卷 / 1-2期

关键词：

D O I：

10.1007/BF00753624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Theoretical arguments and experimental evidence of acoustic plasmon existence in p-type A(3)B(5) semiconductors are presented. The concept of the selective resonant enhancement of Raman Scattering is delivered which explains the observation of the forbidden acoustic plasmon feature. A theory of electrically screened flows of spin polarized electrons and holes is developed. Acoustic plasmon frequency is measured and the results are compared with calculated values. It is established that the scattering intensity in crossed scattering configuration is determined by a constant of spin dragging. Determination of this constant provides a valuable contribution to the theory of polarized electrons.

引用

页码：121 / 141

页数：21

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