EVALUATION OF THE HOT-CARRIER-INDUCED OFFSET VOLTAGE OF DIFFERENTIAL PAIRS IN ANALOG CMOS CIRCUITS

被引：1

作者：

THEWES, R

KIVI, MJ

GOSER, KF

WEBER, W

机构：

[1] UNIV DORTMUND, LEHRSTUHL BAUELEMENTE ELEKTR TECH, D-44227 DORTMUND, GERMANY

[2] UNIV LIVERPOOL, DEPT ELECT ENGN & ELECTR, LIVERPOOL L69 4BX, MERSEYSIDE, ENGLAND

来源：

QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL | 1995年 / 11卷 / 04期

关键词：

ANALOG; DEGRADATION; DIFFERENTIAL PAIR; DIFFERENTIAL STAGE; HOT-CARRIER; LIFETIME; MATCHING; OFFSET VOLTAGE;

D O I：

10.1002/qre.4680110411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a specifically developed measurement set-up and a test structure typical for analogue applications, high precision measurements of the stress-induced offset voltage degradation of differential pairs are presented. Extrapolation to operating conditions yields valuable information for analogue design in the sub-micron CMOS regime.

引用

页码：273 / 277

页数：5

共 5 条

[1]

Brox M., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P525, DOI 10.1109/IEDM.1991.235341

[2]

CHAN VH, 1993, P CICC

[3]

Chung J. E., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P553, DOI 10.1109/IEDM.1990.237138

[4]

THEWES R, 1993, ESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, P85

[5]

Thewes R., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P531, DOI 10.1109/IEDM.1992.307417

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