ENTHALPY OF VACANCY MIGRATION IN SI AND GE

[1] SURFACE STATES AND SURFACE BONDS OF SI(111) [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 106 - 109

[2] SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI [J]. PHYSICAL REVIEW B, 1973, 8 (04) : 1777 - 1780

[3] Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4

[4] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +

[5] ENERGY LEVELS IN IRRADIATED GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 995 - 998

[6] BREBRICK RF, 1969, J SOLID STATE CHEM, V1, P88

[7] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309

[8] CASEY HC, 1973, POINT DEFECTS SOLIDS, V2

[9] PSEUDOPOTENTIAL CALCULATIONS OF RELAXATION AND FORMATION ENERGY OF A VACANCY IN ALUMINUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (02) : 465 - &

[10] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[1] SURFACE STATES AND SURFACE BONDS OF SI(111) [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 106 - 109

[2] SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI [J]. PHYSICAL REVIEW B, 1973, 8 (04) : 1777 - 1780

[3] Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4

[4] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +

[5] ENERGY LEVELS IN IRRADIATED GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 995 - 998

[6] BREBRICK RF, 1969, J SOLID STATE CHEM, V1, P88

[7] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309

[8] CASEY HC, 1973, POINT DEFECTS SOLIDS, V2

[9] PSEUDOPOTENTIAL CALCULATIONS OF RELAXATION AND FORMATION ENERGY OF A VACANCY IN ALUMINUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (02) : 465 - &

[10] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &