MOLECULAR-BEAM HOMOEPITAXIAL GROWTH OF MGO(001)

被引：51

作者：

CHAMBERS, SA

TRAN, TT

HILEMAN, TA

机构：

[1] Molecular Science Research Center, Pacific Northwest Laboratory

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 11期

关键词：

D O I：

10.1557/JMR.1994.2944

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe homoepitaxial growth and detailed in situ characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred angstroms in the substrate temperature range of 450 degrees C to 750 degrees C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surfaces of films grown at 650 degrees and 750 degrees C are smoother than those obtained by cleaving MgO(001).

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页码：2944 / 2952

页数：9

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