RAMAN-SPECTRA OF CUALSE2 HETEROEPITAXIAL LAYERS

被引：15
作者：
CHICHIBU, S [1 ]
KAMATA, A [1 ]
机构：
[1] TOSHIBA CO LTD,CTR RES & DEV,MAT & DEVICES RES LABS,KAWASAKI,KANAGAWA 210,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 10期
关键词：
D O I：
10.1063/1.359247
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature Raman spectra were measured for CuAlSe2 heteroepitaxial layers grown on GaAs (001) and GaP (001) substrates. A remarkable difference in the polarized Raman spectra was noted, and the results were attributed to be due to the lattice orientation of the epilayers on the basis of the polarization selection rules of Raman active modes. Two vibrational modes were assigned, namely the A1 mode at 189 cm-1 and longitudinal-optical B2 mode at 89 cm-1. © 1995 American Institute of Physics.
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页码：5470 / 5472
页数：3
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