REDUCTION OF SURFACE-DEFECTS IN GAAS-LAYERS GROWN BY MBE

被引：10

作者：

KAWADA, H

SHIRAYONE, S

TAKAHASHI, K

机构：

[1] Mechanical Engineering Research Laboratory, Hitachi, Ltd, Tsuchiura, Ibaraki, 300

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90384-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Specific types of surface defects in GaAs layers grown by molecular beam epitaxy could be reduced and be investigated quantitatively using a surface analysis system. Type C defects, which are ovals with notches, were reduced by increasing the distance between the Ga cell and substrate. Type D, which are ovals with obscure outline, could be eliminated by adjusting the As flux to the lowest limit for epitaxial growth. Type H, which are dark spots, decreased with the number of growths.

引用

页码：550 / 556

页数：7

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