ELECTRON-PHONON INTERACTION DURING RESONANT-TUNNELING THROUGH A DOUBLE-BARRIER HETEROSTRUCTURE

被引：8

作者：

FIGIELSKI, T ^{[1
]}

MAKOSA, A ^{[1
]}

WOSINSKI, T ^{[1
]}

HARNESS, PC ^{[1
]}

SINGER, KE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QP,LANCS,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 11期

关键词：

QUANTUM WELLS; SEMICONDUCTORS; TUNNELING; ELECTRON-PHONON INTERACTIONS;

D O I：

10.1016/0038-1098(94)90012-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigated thoroughly the current-voltage characteristic and the differential conductance of AlGaAs-based resonant-tunneling diodes. We have revealed a fine oscillatory structure of the broad plateau beyond the main resonance peak, displaying a period of 36 mV. We argue that this plateau represents a convolution of several satellite peaks resulting from the resonant tunneling via coupled electron-phonon states in the quantum well.

引用

页码：913 / 917

页数：5

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