HIGH-POWER INGAASP/GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS

被引：17

作者：

DIAZ, J

ELIASHEVICH, I

HE, X

YI, H

WANG, L

KOLEV, E

GARBUZOV, D

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.112206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-mum apertune has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T0 = 155-degrees-C, transverse beam divergence of 27-degrees, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.

引用

页码：1004 / 1005

页数：2

共 8 条

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