EFFECTS OF HIGH-FLUX LOW-ENERGY (20-100 EV) ION IRRADIATION DURING DEPOSITION ON THE MICROSTRUCTURE AND PREFERRED ORIENTATION OF TI0.5AL0.5N ALLOYS GROWN BY ULTRA-HIGH-VACUUM REACTIVE MAGNETRON SPUTTERING

被引:154
作者
ADIBI, F
PETROV, I
GREENE, JE
HULTMAN, L
SUNDGREN, JE
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] LINKOPING UNIV,DEPT PHYS,DIV THIN FILM,S-58183 LINKOPING,SWEDEN
关键词
D O I
10.1063/1.353388
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of incident ion/metal flux ratio J(i)/J(Me) and ion energy E(i) on the microstructure, texture, and phase composition of polycrystalline metastable Ti0.5Al0.5N films produced by reactive magnetron sputtering have been investigated using x-ray diffraction (XRD), plan-view and cross-sectional transmission electron microscopy, and Rutherford backscattering spectroscopy. The films, typically congruent-to 1 mum thick, were deposited at a pressure of 20 mTorr (2.67 Pa) in pure N2 on thermally oxidized Si(001) substrates at 250+/-25-degrees-C. The N2+ ion flux to the substrate was controlled by means of a variable axial magnetic field superimposed on the permanent magnetic field of the magnetron. Films deposited at E(i)=20 eV (congruent-to 10 eV per incident accelerated N) with J(i)/J(Me)=1 exhibited a complete (111) texture with a porous columnar microstructure and an average column size of congruent-to 30 nm. Increasing E(i) from 20 to 85 eV, while maintaining J(i)/J(Me) constant at 1, resulted in a small change in texture as the XRD intensity ratio I002/(I111 + I002) increased from congruent-to 0 to 0.14, a decrease in average column size to 25 nm, and a reduction in intracolumn porosity. The stoichiometric ratio N/(Ti+Al) increased from 1 at E(i)=20 eV with J(i)/J(Me)=1 to 1.23 at E(i)=85 eV indicating trapping of excess N while the lattice constant a0 increased from 0.4157 to 0.4188 nm due to compressive stress. E(i) values greater-than-or-equal-to 100 eV led to alloy phase separation. In contrast, maintaining E(i) at congruent-to 20 eV and increasing J(i)/J(Me), from 1 to greater-than-or-equal-to 5.2 resulted in a change from a porous (111) texture to a dense completely (002)-oriented microstructure with an increase in the average column size to 35 nm. N/(Ti+Al) and a0 remained essentially constant and the alloy remained single phase. Mechanistic pathways leading to microstructure and texture changes through variations in E(i) at constant J(i)/J(Me) and in J(i)/J(Me) at constant E(i) were found to be quite different. The average energy deposited per metal atom, [E(d)]=E(i)(J(i)/J(Me)), is therefore not a universal parameter, as has been previously proposed, for describing film growth.
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页码:8580 / 8589
页数:10
相关论文
共 36 条
[21]   USE OF AN EXTERNALLY APPLIED AXIAL MAGNETIC-FIELD TO CONTROL ION NEUTRAL FLUX RATIOS INCIDENT AT THE SUBSTRATE DURING MAGNETRON SPUTTER DEPOSITION [J].
PETROV, I ;
ADIBI, F ;
GREENE, JE ;
SPROUL, WD ;
MUNZ, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (05) :3283-3287
[22]   INTERFACIAL REACTIONS IN EPITAXIAL AL/TI1-XALXN (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.2) MODEL DIFFUSION-BARRIER STRUCTURES [J].
PETROV, I ;
MOJAB, E ;
ADIBI, F ;
GREENE, JE ;
HULTMAN, L ;
SUNDGREN, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (01) :11-17
[23]   POLYCRYSTALLINE TIN FILMS DEPOSITED BY REACTIVE BIAS MAGNETRON SPUTTERING - EFFECTS OF ION-BOMBARDMENT ON RESPUTTERING RATES, FILM COMPOSITION, AND MICROSTRUCTURE [J].
PETROV, I ;
HULTMAN, L ;
SUNDGREN, JE ;
GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (02) :265-272
[24]  
PETROV I, UNPUB
[25]   EPSILON-TI2N PHASE GROWTH-CONTROL IN TITANIUM NITRIDE FILMS [J].
POULEK, V ;
MUSIL, J ;
CERNY, R ;
KUZEL, R .
THIN SOLID FILMS, 1989, 170 (02) :L55-L58
[26]   CHARGE TRANSFER IN OXYGEN, NITROGEN, AND NITRIC OXIDE [J].
STEBBINGS, RF ;
SMITH, ACH ;
TURNER, BR .
JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (09) :2277-&
[27]  
SUNDGREN JE, 1986, AM I PHYSICS SERIES, V149, P95
[28]   DIAGNOSTIC METHODS FOR SPUTTERING PLASMAS [J].
THORNTON, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :188-192
[29]  
WAHLSTROM U, IN PRESS THIN SOLID
[30]   CALCULATION OF DEPOSITION RATES IN DIODE SPUTTERING SYSTEMS [J].
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (01) :1-9