EVIDENCE FOR A VALLEY-OCCUPANCY TRANSITION IN SI INVERSION-LAYERS AT LOW ELECTRON-DENSITIES

被引：19
作者：
COLE, T
MCCOMBE, BD
QUINN, JJ
KALIA, RK
机构：
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
[2] ARGONNE NATL LAB,ARGONNE,IL 60439
来源：
PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 16期
关键词：
D O I：
10.1103/PhysRevLett.46.1096
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1096 / 1099
页数：4
相关论文
共 12 条
[1]   INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J].
ANDO, T .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03) :263-272
[2]  
ANDO T, 1976, PHYS REV B, V13, P3466
[3]   INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].
BLOSS, WL ;
SHAM, LJ ;
VINTER, V .
PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1529-1532
[4]   INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].
BLOSS, WL ;
SHAM, LJ ;
VINTER, B .
SURFACE SCIENCE, 1980, 98 (1-3) :250-255
[5]  
CHANG KM, 1980, PHYS REV LETT, V44, P1472
[6]   A SIMPLIFIED TREATMENT OF EXCHANGE AND CORRELATION IN SEMICONDUCTING SURFACE INVERSION-LAYERS [J].
KALIA, RK ;
KAWAMOTO, G ;
QUINN, JJ ;
YING, SC .
SOLID STATE COMMUNICATIONS, 1980, 34 (06) :423-426
[7]   PHONON-MEDIATED INTERVALLEY ELECTRON-ELECTRON INTERACTION IN SILICON [J].
KELLY, MJ .
SOLID STATE COMMUNICATIONS, 1978, 27 (07) :717-719
[8]  
MCCOMBE BD, 1979, SOLID STATE COMMUN, V8, P603
[9]   VALLEY-VALLEY SPLITTING IN INVERSION LAYERS ON A HIGH-INDEX SURFACE OF SILICON [J].
SHAM, LJ ;
ALLEN, SJ ;
KAMGAR, A ;
TSUI, DC .
PHYSICAL REVIEW LETTERS, 1978, 40 (07) :472-475
[10]  
WHITE CT, 1979, 3RD P INT C EL PROP, P271
12