FORMATION OF 4 NEW SHALLOW EMISSIONS IN MN+ ION-IMPLANTED GAAS GROWN BY MOLECULAR-BEAM EPITAXY HAVING EXTREMELY LOW CONCENTRATION OF BACKGROUND IMPURITIES

被引：13

作者：

SHEN, HL ^{[1
]}

MAKITA, Y ^{[1
]}

NIKI, S ^{[1
]}

YAMADA, A ^{[1
]}

IIDA, T ^{[1
]}

SHIBATA, H ^{[1
]}

OBARA, A ^{[1
]}

UEKUSA, S ^{[1
]}

机构：

[1] MEIJI UNIV,KAWASAKI 214,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn+ ions were implanted into ultrapure GaAs layers grown by molecular beam epitaxy. 2 K photoluminescence revealed that in addition to the well-established Mn-related deep acceptor emission at approximately 1.41 eV, four new shallow emissions denoted by (Mn-degrees, X), ''G'', ''H'', and (D, A)2 are formed in the near band edge when the Mn concentration [Mn] exceeds 3 X 10(16) cm-3 . Both ''G'' and ''H'' exhibit no energy shift with growing [Mn] up to 1 X 10(19) cm-3. In contrast, for shallow acceptor- (such as C) doped GaAs with extremely low background concentrations of donor impurities, a series of [g-g]-like energy levels, which present strong energy shifting with increasing acceptor concentration, are universally formed. These results show that pairs between deep Mn acceptors do not produce such [g-g] like energy levels.

引用

页码：1780 / 1782

页数：3

共 14 条

[1] SHALLOW-ACCEPTOR ISOELECTRONIC-IMPURITY COMPLEXES IN GAAS [J].

BEYE, AC ;

GARCIA, JC ;

NEU, G ;

CONTOUR, JP ;

MASSIES, J .

SOLID STATE COMMUNICATIONS, 1988, 67 (12) :1239-1243

[2]

GUTKIN AA, 1988, SOV PHYS SEMICOND+, V22, P879

[3]

HU CH, 1992, J APPL PHYS, V72, P5642

[4]

LEE TC, 1964, SOLID STATE COMMUN, V2, P264

[5]

Makita Y., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V796, P204, DOI 10.1117/12.941019

[6] EVIDENCE FROM PHOTOLUMINESCENCE SPECTRA FOR THE FORMATION OF EXTREMELY LOW-COMPENSATED P-TYPE AND N-TYPE GE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MAKITA, Y ;

MORI, M ;

TANAKA, H ;

YOKOHAMA, H ;

IRIE, K ;

OHNISHI, N ;

SHIGETOMI, S .

JOURNAL OF LUMINESCENCE, 1988, 40-1 :907-908

[7] LIQUID-PHASE EPITAXY OF HEAVILY MG-DOPED GAAS - FORMATION OF A NEW NEAR-BAND-EDGE EMISSION EXCLUSIVELY PERTINENT TO ACCEPTOR IMPURITIES [J].

MORI, M ;

MAKITA, Y ;

OKADA, Y ;

OHNISHI, N ;

MITSUHASHI, Y ;

TANAKA, H ;

MATSUMORI, T .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3212-3215

[8]

NIKI S, 1993, NUCL INSTUM METHOD B, V80, P518

[9]

NOIK IK, 1987, J ELECTROCHEM SOC, V134, P1270

[10] MANGANESE LUMINESCENCE IN GAAS/GAALAS SUPERLATTICES [J].

PLOT, B ;

DEVEAUD, B ;

LAMBERT, B ;

CHOMETTE, A ;

REGRENY, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (22) :4279-4289

← 1 2 →