IMPURITY LEVELS IN AS-DOPED INDIUM SELENIDE SINGLE-CRYSTALS

被引：4

作者：

MICOCCI, G ^{[1
]}

TEPORE, A ^{[1
]}

RELLA, R ^{[1
]}

SICILIANO, P ^{[1
]}

机构：

[1] CNR,IST MAT ELETTR,LECCE,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 133卷 / 02期

关键词：

D O I：

10.1002/pssa.2211330225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impurity levels in As-doped InSe single crystals are investigated by Hall effect and deep level transient spectroscopy measurements. A deep acceptor level associated with dopant atoms is detected at about 0.57 eV above the valence band. The capture cross-section shows an actived temperature dependence in the explored temperature range between 330 and 430 K with an activation energy of about 0.13 eV. The concentration profile of this level is also reported.

引用

页码：421 / 428

页数：8

共 14 条

[11] ELECTRON-SCATTERING MECHANISMS IN N-TYPE INDIUM SELENIDE
SEGURA, A
POMER, F
CANTARERO, A
KRAUSE, W
CHEVY, A
[J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5708 - 5717
[12] INVESTIGATION OF IMPURITY LEVELS IN N-TYPE INDIUM SELENIDE BY MEANS OF HALL-EFFECT AND DEEP LEVEL TRANSIENT SPECTROSCOPY
SEGURA, A
WUNSTEL, K
CHEVY, A
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (03): : 139 - 145
[13] ANNEALING BEHAVIOR OF ELECTRICAL-PROPERTIES OF N-INSE SINGLE-CRYSTALS
SHIGETOMI, S
IKARI, T
KOGA, Y
SHIGETOMI, S
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01): : K69 - K72
[14] Van de Pauw L.J., 1958, PHILIPS RES REP, V13, P1

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