IMPURITY LEVELS IN AS-DOPED INDIUM SELENIDE SINGLE-CRYSTALS

被引：4

作者：

MICOCCI, G ^{[1
]}

TEPORE, A ^{[1
]}

RELLA, R ^{[1
]}

SICILIANO, P ^{[1
]}

机构：

[1] CNR,IST MAT ELETTR,LECCE,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 133卷 / 02期

关键词：

D O I：

10.1002/pssa.2211330225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impurity levels in As-doped InSe single crystals are investigated by Hall effect and deep level transient spectroscopy measurements. A deep acceptor level associated with dopant atoms is detected at about 0.57 eV above the valence band. The capture cross-section shows an actived temperature dependence in the explored temperature range between 330 and 430 K with an activation energy of about 0.13 eV. The concentration profile of this level is also reported.

引用

页码：421 / 428

页数：8

共 14 条

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