ELECTRONIC BAND STRUCTURES OF WIDE BAND GAP SEMICONDUCTORS GAN AND A1N

被引：74
作者：
JONES, D
LETTINGTON, AH
机构：
来源：
SOLID STATE COMMUNICATIONS | 1972年 / 11卷 / 05期
关键词：
D O I：
10.1016/0038-1098(72)90490-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：701 / +
页数：1
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