CHARACTERIZATION OF EPITAXIAL-FILMS OF LAYERED MATERIALS USING MOIRE IMAGES OF SCANNING TUNNELING MICROSCOPE

被引：20

作者：

MORI, T

ABE, H

SAIKI, K

KOMA, A

机构：

[1] Department of Chemistry, University of Tokyo, Bunkyo-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

SCANNING TUNNELING MICROSCOPE; TRANSITION METAL DICHALCOGENIDES; LAYERED MATERIALS; MOLECULAR BEAM EPITAXY; HETEROEPITAXIAL GROWTH; MOIRE PATTERN;

D O I：

10.1143/JJAP.32.2945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Moire-type modulated patterns have been observed in scanning tunneling microscope (STM) images of ultra-thin epitaxial films of MoSe2 grown on MoS2 substrates, which arise from the existence of a very abrupt interface between two lattice-mismatched materials. Some distortions have been observed in the moire patterns, reflecting the local lattice distortions in epitaxial films. It has been proven from a simple analysis that the moire patterns enhance the distortions in the epitaxial films by a factor of 10 to 20, which enables the precise characterization of local lattice distortions in the epitaxial films.

引用

页码：2945 / 2949

页数：5

共 9 条

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