INSULATED-GATE FIELD-EFFECT TRANSISTOR - BIPOLAR TRANSISTOR IN DISGUISE

被引：0

作者：

JOHNSON, EO ^{[1
]}

机构：

[1] RCA INT LICENSING,NEW YORK,NY 10000

来源：

RCA REVIEW | 1973年 / 34卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：80 / 94

页数：15

共 12 条

[1]

DOW WG, 1952, FUNDAMENTALS ENGINEE

[2] LIMITATION OF PROPERTIES OF FIELD-EFFECT TRANSISTORS [J].

EVANS, L ;

PULLEN, KA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01) :82-&

[3]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

JOHNSON, EO ;

ROSE, A .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (03) :407-418

[5]

JOHNSON EO, 1965, RCA REV, V26, P163

[6]

RICHMAN P, 1967, CHARACTERISTICS OPER

[7]

ROSE A, 1963, RCA REV, V24, P627

[8]

SAH, 1966, IEEE T ELEC DEVICES, VED13, P395

[9]

SPARKES JJ, 1957, P IRE, V45, P1740

[10]

TROUTMAN RR, 1973, THAM94 ISSCC PAP