SPONTANEOUS EMISSION FROM A DIPOLE IN A SEMICONDUCTOR MICROCAVITY

被引：74
作者：
DEPPE, DG
LEI, C
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期
关键词：
D O I：
10.1063/1.349236
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of a semiconductor microcavity on the radiative spontaneous recombination of an electron-hole pair strategically placed (by virtue of a quantum well) in the microcavity is considered. First-order perturbation theory is used in the quantum mechanical calculation of the spatially anistropic radiation rate and shows a strong influence of the cavity, and dipole position in the cavity, on the spontaneous photon emission process. Calculations are compared with previous experiments [T. J. Rogers, D. G. Deppe, and B. G. Streetman, Appl. Phys. Lett. 57, 1858 (1990)].
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页码：3443 / 3448
页数：6
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