DESIGN PROPERTIES OF POLYCRYSTALLINE SILICON

被引：44
作者：
KAMINS, TI
机构：
[1] Hewlett-Packard, Palo Alto, CA 94303-0867
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期
关键词：
D O I：
10.1016/0924-4247(90)87039-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline silicon is used in a variety of sensor applications, in which stress and other mechanical effects can dominate the device behavior. The. © 1990.
引用
收藏
页码：817 / 824
页数：8
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