DESIGN PROPERTIES OF POLYCRYSTALLINE SILICON

被引：44
作者：
KAMINS, TI
机构：
[1] Hewlett-Packard, Palo Alto, CA 94303-0867
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期
关键词：
D O I：
10.1016/0924-4247(90)87039-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline silicon is used in a variety of sensor applications, in which stress and other mechanical effects can dominate the device behavior. The. © 1990.
引用
收藏
页码：817 / 824
页数：8
相关论文
共 31 条
[1]   STRESS IN CHEMICALLY VAPOUR-DEPOSITED SILICON FILMS [J].
ADAMCZEWSKA, J ;
BUDZYNSKI, T .
THIN SOLID FILMS, 1984, 113 (04) :271-285
[2]   THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON [J].
BEAN, KE ;
HENTZSCHEL, HP ;
COLMAN, D .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2358-+
[3]   CARBON IN POLYCRYSTALLINE SILICON, INFLUENCE ON RESISTIVITY AND GRAIN-SIZE [J].
BLOEM, J ;
CLAASSEN, WAP .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :725-726
[4]   TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE POLYCRYSTALLINE SILICON-SIO2 INTERFACE [J].
BRAVMAN, JC ;
SINCLAIR, R .
THIN SOLID FILMS, 1983, 104 (1-2) :153-161
[5]   FLAWS IN SIDEWALL OXIDES GROWN ON POLYSILICON GATE [J].
BROWN, DK ;
HU, SM ;
MORRISSEY, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1084-1089
[6]  
FALCKENBERG R, 1979, OCT EL SOC FALL M LO, P1429
[7]   INTEGRATED MOVABLE MICROMECHANICAL STRUCTURES FOR SENSORS AND ACTUATORS [J].
FAN, LS ;
TAI, YC ;
MULLER, RS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (06) :724-730
[8]   POLYCRYSTALLINE SILICON STRAIN SENSORS [J].
FRENCH, PJ ;
EVANS, AGR .
SENSORS AND ACTUATORS, 1985, 8 (03) :219-225
[9]   EFFECT OF DEPOSITION TEMPERATURE ON LPCVD POLYSILICON [J].
FRENCH, PJ ;
EVANS, AGR .
ELECTRONICS LETTERS, 1986, 22 (13) :716-718
[10]   POLYSILICON STRAIN SENSORS USING SHEAR PIEZORESISTANCE [J].
FRENCH, PJ ;
EVANS, AGR .
SENSORS AND ACTUATORS, 1988, 15 (03) :257-272
1234