CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS

We have extended the work of previous investigators and studied current transport in thin- (10–20 Å) and thick-(80 Å) oxide Mnos structures with complementary tunneling emitter bipolar transistors. These devices are fabricated with ion-implanted p-n and n-p junctions to distinguish the dominant carrier species in the insulator. The dominant species in thin-oxide devices is hole transport, comprising about 99 percent of the emitter current. The hole transport is suppressed in the thick-oxide structures, where the dominant carriers are electrons. Electron impact ionization multiplication is observed in thick-oxide structures. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.