EFFECT OF ION MIXING ON THE DEPTH RESOLUTION OF SPUTTER DEPTH PROFILING

被引：15
作者：
CHENG, YT
DOW, AA
CLEMENS, BM
机构：
[1] GM CORP,SERV,DEPT ANALYT CHEM,WARREN,MI 48090
[2] GM CORP,SERV,DEPT PHYS,WARREN,MI 48090
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期
关键词：
D O I：
10.1063/1.99977
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1346 / 1348
页数：3
相关论文
共 27 条
[1]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[2]  
[Anonymous], 1963, KGL DANSKE VIDENSKAB
[3]  
BRIGGS D, 1983, PRACTICAL SURFACE AN
[4]   FROM CASCADE TO SPIKE - A FRACTAL-GEOMETRY APPROACH [J].
CHENG, YT ;
NICOLET, MA ;
JOHNSON, WL .
PHYSICAL REVIEW LETTERS, 1987, 58 (20) :2083-2086
[5]   INFLUENCE OF CHEMICAL DRIVING FORCES IN ION MIXING OF METALLIC BILAYERS [J].
CHENG, YT ;
VANROSSUM, M ;
NICOLET, MA ;
JOHNSON, WL .
APPLIED PHYSICS LETTERS, 1984, 45 (02) :185-187
[6]  
CHENG YT, IN PRESS MATERIALS M
[7]  
CHENG YT, 1987, MATER RES SOC S P, V74, P419
[8]  
CIRLIN EH, IN PRESS J VAC SCI T
[9]  
Feldman LC, 1986, FUNDAMENTALS SURFACE
[10]  
Hofmann S, 1983, PRACTICAL SURFACE AN, P141
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