ANNEALING EFFECT ON CARRIER DENSITY PROFILE IN GAAS COVERED WITH ANODIC OXIDE

被引：1

作者：

YOKOMIZO, H

IKOMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 09期

关键词：

D O I：

10.1143/JJAP.17.1685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1685 / 1686

页数：2

共 8 条

[1]

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[2]

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :475-479

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[5] AN AMORPHOUS MODIFICATION OF GALLIUM-ARSENIC (V) OXIDE [J].

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ZAININGER, KH .

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[6] STRUCTURE AND COMPOSITION OF NATIVE OXIDES ON GAAS [J].

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[7] MICROWAVE CAPABILITY OF 1.5 MU-M-GATE GAAS MOSFET [J].

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ELECTRONICS LETTERS, 1977, 13 (25) :761-763

[8]

TOKUDA H, 1978, ELECTRONICS LETT, V14, P165

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