IN0.53GA0.47AS PIN PHOTODIODE GROWN BY MOVPE ON A SEMIINSULATING INP SUBSTRATE FOR MONOLITHIC INTEGRATION

被引：10
|
作者：
WAKE, D
WALLING, RH
SARGOOD, SK
HENNING, ID
机构：
[1] British Telecom Research Lab, Ipswich, Engl, British Telecom Research Lab, Ipswich, Engl
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 08期
关键词：
D O I：
10.1049/el:19870301
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
7
引用
收藏
页码：415 / 416
页数：2
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