NEGATIVE CAPACITANCE IN AMORPHOUS SEMICONDUCTOR CHALCOGNIDE THIN FILMS

被引:42
作者
VOGEL, R
WALSH, PJ
机构
[1] Picatinny Arsenal, Dover, NJ
[2] Fairleigh Dickenson University, Teaneck
关键词
D O I
10.1063/1.1652784
中图分类号
O59 [应用物理学];
学科分类号
摘要
Certain amorphous materials exhibit rapid electrical switching. The variation in their capacitance was evaluated as a function of temperature and electric field in the high-resistance state. The zero-field capacitance follows a Curie-Weiss law above room temperature. At low temperatures, and at fields near the threshold of switching for higher temperatures, the open-circuit incremental ac capacitance becomes negative. © 1969 The American Institute of Physics.
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页码:216 / &
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