INP/IN0.53GA0.47AS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：19

作者：

CAMPBELL, JC

TSANG, WT

QUA, GJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期

关键词：

D O I：

10.1109/EDL.1987.26591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：171 / 173

页数：3

共 16 条

[1]

Alferov Z. I., 1973, FIZ TEKH POLUPROV, V7, P1159

[2]

ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V7, P780

[3] HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR [J].

BENEKING, H ;

MISCHEL, P ;

SCHUL, G .

ELECTRONICS LETTERS, 1976, 12 (16) :395-396

[4] PHOTOTRANSISTORS, APD-FET, AND PINFET OPTICAL RECEIVERS FOR 1-1.6-MU-M WAVELENGTH [J].

BRAIN, MC ;

SMITH, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :390-395

[5] PHOTOTRANSISTORS IN DIGITAL OPTICAL COMMUNICATION-SYSTEMS [J].

BRAIN, MC ;

SMITH, DR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1139-1148

[6] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[7] SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR [J].

CAMPBELL, JC ;

BURRUS, CA ;

DENTAI, AG ;

OGAWA, K .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :820-821

[8]

CAMPBELL JC, 1985, SEMICONDUCT SEMIMET, V22, P389

[9] HETEROJUNCTION PHOTOTRANSISTORS FOR LONG-WAVELENGTH OPTICAL RECEIVERS [J].

CAMPBELL, JC ;

OGAWA, K .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1203-1208

[10] (GAAL)AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS WITH HIGH-CURRENT GAIN [J].

KONAGAI, M ;

KATSUKAWA, K ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4389-4394

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