ELECTRICAL RESISTANCE AND THERMOELECTRIC POWER OF AN AMORPHOUS TE70CU25AU5 ALLOY

被引：10

作者：

TSUEI, CC

机构：

[1] W. M. Keck Engineering Laboratories, California Institute of Technology, Pasadena, CA

来源：

PHYSICAL REVIEW | 1968年 / 170卷 / 03期

关键词：

D O I：

10.1103/PhysRev.170.775

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electrical resistance and the thermoelectric power of an amorphous Te70Cu25Au5 alloy obtained by rapid quenching from the liquid state have been measured in the range of 80 to 300°K. The results suggest that the bonding between tellurium atoms is covalent, as in crystalline tellurium. The amorphous alloy is a p-type semiconductor with an intrinsic energy gap of 0.210.01 eV. The results also establish the existence of extrinsic conduction in an amorphous alloy with a discrete localized energy level of 0.090.015 eV above the top of the valence band. © 1968 The American Physical Society.

引用

页码：775 / &

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