ARSENIC CAP LAYER DESORPTION AND THE FORMATION OF GAAS(001)C(4X4) SURFACES

被引：22

作者：

KARPOV, I ^{[1
]}

VENKATESWARAN, N ^{[1
]}

BRATINA, G ^{[1
]}

GLADFELTER, W ^{[1
]}

FRANCIOSI, A ^{[1
]}

SORBA, L ^{[1
]}

机构：

[1] CNR,IST ICMAT,ROME,ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.588130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs(001)c(4X4) surfaces were obtained in the 380-450 degrees C temperature range by thermal desorption of As cap layers from substrates prepared by molecular beam epitaxy. Although reflection high-energy electron diffraction patterns showed little change in the temperature range explored, in situ scanning tunneling microscopy and Auger spectroscopy, complemented by ex situ atomic force microscopy, indicate that in the lower-temperature range examined up to 11%-12% of the surface may still be occupied by adsorbed As in the form bf wires and particles preferentially oriented along[100] directions. (C) 1995 American Vacuum Society.

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页码：2041 / 2048

页数：8

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