DETERMINATION OF THE STRESS PROFILE IN ION-IMPLANTED GARNETS

被引：8

作者：

KERSUSAN, JP

GERARD, P

GAILLIARD, JP

JOUVE, H

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1981年 / 17卷 / 06期

关键词：

D O I：

10.1109/TMAG.1981.1061494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2917 / 2919

页数：3

共 11 条

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[6] RELIABLE PROPAGATION OF MAGNETIC-BUBBLES WITH 8-MU-M PERIOD ION-IMPLANTED PROPAGATION PATTERNS [J].

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[7]

SMIT PH, 1980, NOV 3M C DALL

[8] X-RAY DETERMINATION OF STRAIN AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED LAYERS [J].

SPERIOSU, VS ;

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KOBAYASHI, T .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :539-542

[9]

SURAN G, 1981, MAY INTERMAG C GREN

[10] ION IMPLANT PROFILES IN GARNET-FILMS [J].

WASHBURN, HA ;

GALLI, G .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :2267-2269

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