COLORLESS, TRANSPARENT, C-ORIENTED ALUMINUM NITRIDE FILMS GROWN AT LOW-TEMPERATURE BY A MODIFIED SPUTTER GUN

被引：13

作者：

ONISHI, S

ESCHWEI, M

BIELACZY, S

WANG, WC

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：643 / 645

页数：3

共 14 条

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[5] DIELECTRIC PROPERTIES OF REACTIVELY SPUTTERED FILMS OF ALUMINUM NITRIDE [J].

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[6] TRANSPARENT AND HIGHLY ORIENTED ZNO FILMS GROWN AT LOW-TEMPERATURE BY SPUTTERING WITH A MODIFIED SPUTTER GUN [J].

ONISHI, S ;

ESCHWEI, M ;

WANG, WC .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :419-421

[7]

ONISHI S, 1978, THESIS KYOTO U, P14

[8] LOW-TEMPERATURE GROWTH OF PIEZOELECTRIC AIN FILM BY RF REACTIVE PLANAR MAGNETRON SPUTTERING [J].

SHIOSAKI, T ;

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ODA, T ;

KAWABATA, A .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :643-645

[9]

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[10] RF-SPUTTERED ALUMINUM NITRIDE FILMS ON SAPPHIRE [J].

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REEDER, TM ;

PARADIS, EL .

APPLIED PHYSICS LETTERS, 1974, 24 (04) :155-156

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