THE INFLUENCE OF AXIAL MAGNETIC-FIELDS ON THE GROWTH OF III-V-SEMICONDUCTORS FROM METALLIC SOLUTIONS

被引：24

作者：

DANILEWSKY, AN

DOLD, P

BENZ, KW

机构：

[1] Kristallographisches Institut, Universität

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 121卷 / 03期

关键词：

D O I：

10.1016/0022-0248(92)90140-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

III-V semiconductor crystals are grown by the travelling heater method in a homogeneous axial magnetic field. First results demonstrate an influence not only on transport phenomena but also on growth kinetics and morphological stability. An interpretation of the growth results is given by an order of magnitude analysis using the dimensionless Rayleigh and Hartmann numbers.

引用

页码：305 / 314

页数：10

共 20 条

[1]

Bauser E., 1985, Crystal Growth of Electronic Materials. 5th International Summer School on Crystal Growth and Materials Research, P41

[2] GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD [J].