PHOTOSTIMULATED DEFECT IMPURITY REACTIONS DURING ION-BOMBARDMENT OF SI

It is shown that photoexcitation of the electronic subsystem of semiconductors by light irradiation during ion bombardment causes a change in nature and a decrease in the amount of radiation damage stored in the implanted layer, has an influence on the spatial distribution of radiation defects and implanted atoms, changes the rate of chemical reaction between implanted species and silicon atoms in the case when reactive ions are implanted, and influences the microstructure of the implanted layer after thermal annealing. The extent of suppression of defect accumulation under photoexcitation is found to be dependent on the preaccumulated damage. Most of the experiments were performed on Si. A few photostimulated effects were observed in GaAs as well.