DETECTION OF MAGNETIC-RESONANCE ON PHOTOLUMINESCENCE FROM A SI/SI1-XGEX STRAINED-LAYER SUPERLATTICE

被引：45

作者：

GLASER, E ^{[1
]}

TROMBETTA, JM ^{[1
]}

KENNEDY, TA ^{[1
]}

PROKES, SM ^{[1
]}

GLEMBOCKI, OJ ^{[1
]}

WANG, KL ^{[1
]}

CHERN, CH ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.65.1247

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures. © 1990 The American Physical Society.

引用

页码：1247 / 1250

页数：4

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