COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA

被引：40

作者：

CHEUNG, R ^{[1
]}

LEE, YH ^{[1
]}

LEE, KY ^{[1
]}

SMITH, TP ^{[1
]}

KERN, DP ^{[1
]}

BEAUMONT, SP ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1462 / 1466

页数：5

共 39 条

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