TUNNELING IN METAL-OXIDE-SILICON STRUCTURES

被引：107

作者：

DAHLKE, WE

SZE, SM

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 08期

关键词：

D O I：

10.1016/0038-1101(67)90169-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：865 / &

共 12 条

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[2] ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T) [J].

CHANG, LL ;

ESAKI, L ;

JONA, F .

APPLIED PHYSICS LETTERS, 1966, 9 (01) :21-&

[3] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[5]

CROWELL CR, 1965, J APPL PHYS, V36, P3343

[6] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&

[7] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J].

ESAKI, L ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (24) :1108-&

[8]

GOETZBER.A, 1966, ARCH ELEKTR UBERTRAG, V20, P241

[9] IMPROVED PROPERTIES OF SILICON DIOXIDE LAYERS GROWN UNDER BIAS [J].

GOETZBERGER, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :138-+

[10]

GRAY PV, 1965, PHYS REV A, V140, P5207

← 1 2 →