LINEAR TIMEBASE WITH A UNIJUNCTION TRANSISTOR

被引：0

作者：

SALEM, M

机构：

来源：

WIRELESS WORLD | 1970年 / 76卷 / 1422期

关键词：

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

引用

页码：580 / &

共 50 条

[1] UNIJUNCTION TRANSISTOR .2. USING UNIJUNCTION
GREITER, O
WIRELESS WORLD, 1970, 76 (1418): : 403 - &
[2] DC THEORY OF UNIJUNCTION TRANSISTOR
TROFIMENKOFF, FN
HUFF, GJ
INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (03) : 217 - +
[3] VOLTAGE SENSING WITH A UNIJUNCTION TRANSISTOR
GLASGOW, B
BEHAVIOR RESEARCH METHODS & INSTRUMENTATION, 1971, 3 (03): : 129 - &
[4] AN EPITAXIAL PLANAR STRUCTURE FOR UNIJUNCTION TRANSISTOR
SENHOUSE, LS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 161 - &
[5] EQUIVALENT DC CIRCUIT FOR UNIJUNCTION TRANSISTOR
BAILON, L
GARCIA, JL
PARDO, D
ANALES DE FISICA, 1975, 71 (01): : 82 - 86
[6] GENERALIZED CHARACTERIZATION OF UNIJUNCTION TRANSISTOR NETWORKS
LINDER, JS
BARNARD, HM
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (02) : 195 - &
[7] CRITICAL EXPONENTS OF THE TRANSITION OF UNIJUNCTION TRANSISTOR
BRINI, J
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1980, 290 (01): : 5 - 8
[8] INVESTIGATIONS OF THE INDUCTIVE PROPERTIES OF UNIJUNCTION TRANSISTOR
VIKULIN, IM
VIKULINA, LF
GLAUBERMAN, MA
ZAPOROZHCHENKO, YA
RADIOTEKHNIKA I ELEKTRONIKA, 1979, 24 (12): : 2552 - 2557
[9] UNIJUNCTION TRANSISTOR MODEL FOR COMPUTER CIRCUIT ANALYSIS
DANIEL, ME
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (03) : 174 - &
[10] MAIN PARAMETERS AND FEATURES OF UNIJUNCTION PLANAR TRANSISTOR
GAJUEV, ND
GUSEINOVA, AI
GARIBOV, MA
GUSEINOV, NL
IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1976, (03): : 46 - 51

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