VARIATIONS IN TRIMETHYLINDIUM PARTIAL-PRESSURE MEASURED BY AN ULTRASONIC CELL ON MOVPE REACTOR

被引：31
作者：
BUTLER, BR
STAGG, JP
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 02期
关键词：
D O I：
10.1016/0022-0248(89)90025-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：481 / 487
页数：7
相关论文
共 6 条
[1]   A STUDY OF RESIDUAL BACKGROUND DOPING IN HIGH-PURITY INDIUM-PHOSPHIDE GROWN BY ATMOSPHERIC-PRESSURE OMVPE [J].
BRIGGS, ATR ;
BUTLER, BR .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) :535-542
[2]   MO-CVD GROWTH OF INGAAS USING ME3GA, ASME3, ASH3 AND ME3IN OR ET3IN AND ANALYSES OF ADDUCTS FORMED DURING THE GROWTH-PROCESS [J].
CHENG, CH ;
JONES, KA ;
MOTYL, KM .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4) :319-333
[3]  
COATES GE, 1960, ORGANO METALLIC COMP
[4]  
FAKTOR MM, 1986, COMMUNICATION
[5]   METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE [J].
MIRCEA, A ;
AZOULAY, R ;
DUGRAND, L ;
MELLET, R ;
RAO, K ;
SACILOTTI, M .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) :603-620
[6]  
Stagg J.P., 1988, CHEMTRONICS, V3, P44
1