SURFACE-POTENTIAL EFFECT ON GATE DRAIN AVALANCHE BREAKDOWN IN GAAS-MESFET

被引：47
作者：
MIZUTA, H
YAMAGUCHI, K
TAKAHASHI, S
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 10期
关键词：
D O I：
10.1109/T-ED.1987.23194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：2027 / 2033
页数：7
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