OPTIMIZATION AND CHARACTERIZATION OF INDEX-GUIDED VISIBLE ALGAAS/GAAS GRADED BARRIER QUANTUM-WELL LASER-DIODES

Index-guided, single and multiple stripe, visible laser diodes ( lambda equals 6950-7150 angstrom) have been fabricated and characterized. These structures utilize a graded-barrier quantum-well laser structure having high aluminum composition (x equals 0. 60-0. 85) confining layers to obtain low threshold current. The use of thin AlAs quantum-well barrier layers allows short wavelengths to be obtained from the quantum size effect in binary GaAs wells without the need for alloy Al//xGa//1//-//xAs wells. Index-guiding is accomplished by use of either a complementary self-aligned structure or a shallow mesa laser structure, allowing stabilized single-mode laser operation.