MOLECULAR-BEAM EPITAXY GROWTH OF AN ULTRAHIGH FINESSE MICROCAVITY

被引：5
作者：
OESTERLE, U
STANLEY, RP
HOUDRE, R
GAILHANOU, M
ILEGEMS, M
机构：
[1] Institut de Micro et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, Lausanne
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)80151-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A very high finesse Fabry-Perot resonator consisting of a one wavelength long GaAs cavity and two AlAs/Al0.1Ga0.9As distributed Bragg reflectors is grown using molecular beam epitaxy, MBE. The measured Fabry-Perot linewidth is 0.84 Angstrom at 930 nm. This implies a record finesse in excess of 5500 and an effective finesse greater than 1450. Besides permitting the mirror reflectivity to be determined accurately, more detailed analysis of the reflectivity spectrum show that (i) the growth rates are stable to 0.25% over 10 h and (ii) the internal losses are less than 1 cm(-1).
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页码：1313 / 1317
页数：5
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