ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS

被引：93

作者：

DOROFEEV, AM ^{[1
]}

GAPONENKO, NV ^{[1
]}

BONDARENKO, VP ^{[1
]}

BACHILO, EE ^{[1
]}

KAZUCHITS, NM ^{[1
]}

LESHOK, AA ^{[1
]}

TROYANOVA, GN ^{[1
]}

VOROSOV, NN ^{[1
]}

BORISENKO, VE ^{[1
]}

GNASER, H ^{[1
]}

BOCK, W ^{[1
]}

BECKER, P ^{[1
]}

OECHSNER, H ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN, INST OBERFLACHEN & SCHICHTANAL, D-67663 KAISERSLAUTERN, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be a necessary prerequisite for erbium-related luminescence in porous silicon. No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. Possible mechanisms of erbium-related luminescence in porous silicon are discussed. © 1995 American Institute of Physics.

引用

页码：2679 / 2683

页数：5

共 33 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].

ADLER, DL ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

MARCUS, MA ;

BENTON, JL ;

POATE, JM ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183

[2] POROUS SILICON - MATERIAL PROPERTIES, VISIBLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE [J].

BOMCHIL, G ;

HALIMAOUI, A ;

SAGNES, I ;

BADOZ, PA ;

BERBEZIER, I ;

PERRET, P ;

LAMBERT, B ;

VINCENT, G ;

GARCHERY, L ;

REGOLINI, JL .

APPLIED SURFACE SCIENCE, 1993, 65-6 :394-407

[3]

Bondarenko V. P., 1984, Soviet Physics - Technical Physics, V29, P1184

[4]

BONDARENKO VP, 1986, SOV PHYS SEMICOND+, V20, P586

[5]

BONDARENKO VP, 1993, PISMA ZH TEKH FIZ+, V19, P73

[6]

Borisenko V. E., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P375

[7] INCOHERENT LIGHT-INDUCED DIFFUSION OF ARSENIC INTO SILICON FROM A SPIN-ON SOURCE [J].

BORISENKO, VE ;

LARSEN, AN .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :582-584

[8]

BORISENKO VE, IN PRESS RUSS J INOR

[9]

BORISENKO VE, 1992, SOLID STATE PROCESSE, P248

[10] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

← 1 2 3 4 →