LOW-TEMPERATURE BEHAVIOR OF CHANNEL TRANSIT-TIME CONSTANT IN MOS-TRANSISTOR

被引：1
作者：
SRIVASTAVA, A
机构：
[1] Louisiana State Univ, Baton Rouge, LA
来源：
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1992年 / 139卷 / 01期
关键词：
MOS TRANSISTOR; LOW TEMPERATURE BEHAVIOR;
D O I：
10.1049/ip-g-2.1992.0017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The channel transient response time constant of a MOS transistor is studied through the transmission line network of the conductance channel in the 296-77-degrees-K temperature range. The temperature dependence of the channel transit time constant is modelled through the temperature sensitive parameters such as inversion layer mobility, the Fermi potential, intrinsic carrier concentration and threshold voltage. It is shown that the channel time constant is strongly sensitive to the temperature variation in the inversion region and results in the MOS transistor channel resistance having zero, negative and positive temperature coefficients depending upon the gate bias voltage.
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页码：104 / 108
页数：5
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