共 50 条
- [21] SURFACE STUDIES DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 838 - 846
- [26] INVESTIGATION OF INTERACTION PROCESSES BETWEEN A MOLECULAR BEAM AND SILICON SURFACE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1057 - +
- [30] Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride Semiconductors, 2009, 43 : 403 - 409