PREPARATION OF YBA2CU3OX THIN-FILMS BY LAYER-BY-LAYER METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

FUJII, K

ZAMA, H

ODA, S

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, 2-12 O-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期

关键词：

YBA2CU3OX; SEQUENTIAL GAS SUPPLY; MOCVD; METALORGANIC PRECURSORS; THE 1ST LAYER; OXIDATION;

D O I：

10.1143/JJAP.31.L787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the preparation of YBa2Cu3Ox thin films on MgO (100) substrates by sequential metalorganic source supply with the metal configuration along the c-axis at low substrate temperature (560-degrees-C). Oxygen is also sequentially supplied to the substrate. Four types of films are prepared by various sequential supply patterns of metalorganic precursors and oxygen. Our results show that layer-by-layer oxidation is important for c-axis orientation of the films and that Ba is more suitable than Cu as the first layer with respect to preventing the growth of CuYO2.

引用

页码：L787 / L789

页数：3

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