EXPERIMENTAL STUDY OF SURFACE CHANNEL IN INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：4
|
作者：
BANDALI, MB
WRIGHT, GT
机构：
来源：
ELECTRONICS LETTERS | 1971年 / 7卷 / 5-6期
关键词：
D O I：
10.1049/el:19710092
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：142 / &
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