1/F NOISE IS NO SURFACE EFFECT

被引：964
作者：
HOOGE, FN
机构：
[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven
来源：
PHYSICS LETTERS A | 1969年 / A 29卷 / 03期
关键词：
D O I：
10.1016/0375-9601(69)90076-0
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
1/f{hook} Noise is inversely proportional to the total number of mobile charge carriers in homogeneous samples. This excludes surface effects as the main source of 1/f{hook} noise. © 1969.
引用
收藏
页码：139 / &
相关论文
共 17 条
[1]  
ABDUVAKHIDOV KM, 1968, SOV PHYS SEMICOND+, V2, P103
[2]   STUDY OF 1-F NOISE IN SEMICONDUCTOR FILAMENTS [J].
BESS, L .
PHYSICAL REVIEW, 1956, 103 (01) :72-82
[3]   CRYSTALLINE IMPERFECTIONS AND 1-F NOISE [J].
BROPHY, JJ .
PHYSICAL REVIEW, 1959, 115 (05) :1122-1125
[4]  
BROPHY JJ, 1956, J APPL PHYS, V27, P1384
[5]  
BROPHY JJ, 1957, PHYS REV, V106, P657
[6]  
COLLIGAN MB, 1968, PHYS REV, V17, P881
[7]  
DERKSEN HE, 1965, THESIS LEIDEN
[8]   CURRENT NOISE IN EVAPORATED FILMS OF INSB AND INAS [J].
EPSTEIN, M .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2590-&
[9]   CURRENT NOISE IN EVAPORATED INAS POLYCRYSTALLINE FILMS [J].
JORDAN, NA .
SOLID-STATE ELECTRONICS, 1967, 10 (05) :503-&
[10]   GENERATION-RECOMBINATION NOISE IN P-TYPE INSB [J].
KLAASSEN, FM ;
DEHOOG, FJ ;
BLOK, J .
PHYSICA, 1961, 27 (02) :185-&
12