FIELD-INDUCED GENERATION RECOMBINATION NOISE IN (100) N-CHANNEL SI-MOSFET AT T=4.2-K .2. EXPERIMENTS

被引：1

|

作者：

HENDRIKS, EA

ZIJLSTRA, RJJ

机构：

来源：

PHYSICA B & C | 1988年 / 147卷 / 2-3期

关键词：

D O I：

10.1016/0378-4363(88)90287-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：291 / 296

页数：6

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