HIGH-EFFICIENCY CW IMPATT OPERATION

被引：30
作者：
IGLESIAS, DE
EVANS, WJ
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 09期
关键词：
D O I：
10.1109/PROC.1968.6671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1610 / +
页数：1
相关论文
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[1]   CIRCUIT FOR TESTING HIGH-EFFICIENCY IMPATT DIODES [J].
IGLESIAS, DE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11) :2065-&
[2]   HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J].
JOHNSTON, RL ;
SCHARFET.DL ;
BARTELIN.DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1611-+
[3]   HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].
PRAGER, HJ ;
CHANG, KKN ;
WEISBROD, S .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :586-+
[4]   IMPATT OSCILLATOR PERFORMANCE IMPROVEMENT WITH SECOND-HARMONIC TUNING [J].
SWAN, CB .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1616-&
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